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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information SwitchmodeTM Power Rectifier
. . . using the Schottky Barrier principle with a proprietary barrier metal. These state-of-the-art devices have the following features: Features: * Dual Diode Construction -- May be Paralleled for Higher Current Output * Guardring for Stress Protection * Low Forward Voltage Drop * 125C Operating Junction Temperature * Maximum Die Size * Short Heat Sink Tab Manufactured -- Not Sheared!
MBRB3030CTL
SCHOTTKY BARRIER RECTIFIER 30 AMPERES 30 VOLTS
1 4 3 CASE 418B-02 D2PAK Plastic
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (1.0 ms, 1.0 kHz) Storage Temperature Range Operating Junction Temperature Range Voltage Rate of Change (Rated VR, TJ = 25C) Reverse Energy, Unclamped Inductive Surge (TJ = 25C, L = 3.0 mH) Per Device IFRM 30 IFSM 300 IRRM 2.0 Tstg TJ dv/dt 10,000 EAS 224.5 mJ - 55 to 150 - 55 to 125 C C V/ms A A Symbol VRRM VRWM VR IO Value 30 Unit V
15 30
A A
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction-to-Case Thermal Resistance -- Junction-to-Ambient (1) Rtjc Rtja VF 0.44 0.51 IR 2.0 195 mA 1.0 50 C/W C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (2) (IF = 15 A, TJ = 25C) (IF = 30 A, TJ = 25C) Maximum Instantaneous Reverse Current (Rated VR, TJ = 25C) (Rated VR, TJ = 125C) (1) Mounted using minimum recommended pad size on FR-4 board. (2) Pulse Test: Pulse Width = 250 s, Duty Cycle 2.0%. All device data is "Per Leg" except where noted.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
V
Switchmode is a trademark of Motorola, Inc.
(c)RectifierInc. 1997 Data Motorola, Device
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MBRB3030CTL
IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1000 1000
100 TJ = 125C 10 75C 1.0 25C
100 TJ = 125C 10 75C 1.0 25C
0.1 0.1 0.3 0.5 0.7 0.9 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1 0.1 0.3 0.5 0.7 0.9 1.1 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E+0 IR , MAXIMUM REVERSE CURRENT (AMPS) IR , REVERSE CURRENT (AMPS)
1.0E+0 TJ = 125C 1.0E-1 75C
1.0E-1
TJ = 125C
1.0E-2 75C 1.0E-3 25C 1.0E-4 1.0E-5 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS)
1.0E-2
1.0E-3 25C 1.0E-4 1.0E-5 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
dc 20 SQUARE WAVE 15 Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 5.0 FREQ = 20 kHz 0 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) Ipk/Io = 20
PFO , AVERAGE POWER DISSIPATION (WATTS)
25 IO , AVERAGE FORWARD CURRENT (AMPS)
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 5.0 10 15 20 25 IO, AVERAGE FORWARD CURRENT (AMPS) TJ = 125C Ipk/Io = 20 Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = p SQUARE WAVE dc
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Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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Rectifier Device Data
MBRB3030CTL
10,000 IPK, PEAK SURGE CURRENT (AMPS) TJ = 25C C, CAPACITANCE (pF) 100 TJ = 25C
1000
100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS)
10 0.00001 0.0001 t, TIME (seconds) 0.001 0.01
Figure 7. Typical Capacitance
Figure 8. Typical Unclamped Inductive Surge
1.0E+00 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0E-01 Rtjc(t) = Rtjc*r(t)
1.0E-02 0.00001 0.0001 0.001 0.01 t, TIME (seconds) 0.1 1.0 10
Figure 9. Typical Thermal Response
Rectifier Device Data
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Modeling Reverse Energy Characteristics of Power Rectifiers
Prepared by: David Shumate & Larry Walker Motorola Semiconductor Products Sector
MBRB3030CTL
ABSTRACT
Power semiconductor rectifiers are used in a variety of applications where the reverse energy requirements often vary dramatically based on the operating conditions of the application circuit. A characterization method was devised using the Unclamped Inductive Surge (UIS) test technique. By testing at only a few different operating conditions (i.e. different inductor sizes) a safe operating range can be established for a device. A relationship between peak avalanche current and inductor discharge time was established. Using this relationship and circuit parameters, the part applicability can be determined. This technique offers a power supply designer the total operating conditions for a device as opposed to the present single-data-point approach.
INTRODUCTION
In today's modern power supplies, converters and other switching circuitry, large voltage spikes due to parasitic inductance can propagate throughout the circuit, resulting in catastrophic device failures. Concurrent with this, in an effort to provide low-loss power rectifiers, i.e. devices with lower forward voltage drops, schottky technology is being applied to
devices used in this switching power circuitry. This technology lends itself to lower reverse breakdown voltages. This combination of high voltage spikes and low reverse breakdown voltage devices can lead to reverse energy destruction of power rectifiers in their applications. This phenomena, however, is not limited to just schottky technology. In order to meet the challenges of these situations, power semiconductor manufacturers attempt to characterize their devices with respect to reverse energy robustness. The typical reverse energy specification, if provided at all, is usually given as energy-to-failure (mJ) with a particular inductor specified for the UIS test circuit. Sometimes, the peak reverse test current is also specified. Practically all reverse energy characterizations are performed using the UIS test circuit shown in Figure 10. Typical UIS voltage and current waveforms are shown in Figure 11. In order to provide the designer with a more extensive characterization than the above mentioned one-point approach, a more comprehensive method for characterizing these devices was developed. A designer can use the given information to determine the appropriateness and safe operating area (SOA) of the selected device.
HIGH SPEED SWITCH
CHARGE INDUCTOR
DRAIN CURRENT FREE-WHEELING DIODE + V - DRAIN VOLTAGE DUT GATE VOLTAGE INDUCTOR CHARGE SWITCH
Figure 10. Simplified UIS Test Circuit
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Rectifier Device Data
Suggested Method of Characterization
INDUCTOR CURRENT
DUT REVERSE VOLTAGE
TIME (s)
Figure 11. Typical Voltage and Current UIS Waveforms Utilizing the UIS test circuit in Figure 10, devices are tested to failure using inductors ranging in value from 0.01 to 159 mH. The reverse voltage and current waveforms are acquired to determine the exact energy seen by the device and the inductive current decay time. At least 4 distinct inductors and 5 to 10 devices per inductor are used to generate the characteristic current versus time relationship. This relationship when coupled with the application circuit conditions, defines the SOA of the device uniquely for this application. Example Application The device used for this example was an MBR3035CT, which is a 30 A (15 A per side) forward current, 35 V reverse breakdown voltage rectifier. All parts were tested to destruction at 25C. The inductors used for the characterization were 10, 3.0, 1.0 and 0.3 mH. The data recorded from the testing were peak reverse current (Ip), peak reverse breakdown voltage (BVR), maximum withstand energy, inductance and inductor discharge time (see Table 1). A plot of the Peak Reverse Current versus Time at device destruction, as shown in Figure 12, was generated. The area under the curve is the region of lower reverse energy or lower stress on the device. This area is known as the safe operating area or SOA.
120 100 80 60 40 20 SAFE OPERATING AREA 0 0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 TIME (s) UIS CHARACTERIZATION CURVE
Figure 12. Peak Reverse Current versus Time for DUT
Rectifier Device Data
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Table 1. UIS Test Data
PART NO. IP (A) 46.6 41.7 46.0 42.7 44.9 44.1 26.5 26.4 24.4 27.6 27.7 17.9 18.9 18.8 19.0 74.2 77.3 75.2 77.3 73.8 75.6 74.7 78.4 70.5 78.3 BVR (V) 65.2 63.4 66.0 64.8 64.8 64.1 63.1 62.8 62.2 62.9 63.2 62.6 62.1 60.7 62.6 69.1 69.6 68.9 69.6 69.1 69.2 68.6 70.3 66.6 69.4 ENERGY (mJ) 998.3 870.2 L (mH) 1 1 1 1 1 1 3 3 3 3 3 TIME (ms) 715 657 697 659 693 687 1 2 3 4 5 6 7 8 9 1038.9 904.2 997.3 865.0 1022.6 1024.9 872.0 1261 1262 1178 10 11 1091.0 1102.4 1316 1314 2851 3038 3092 3037 322 333 328 333 321 328 327 335 317 339 12 13 14 15 16 17 18 19 20 21 22 23 24 25 1428.6 1547.4 1521.1 1566.2 768.4 815.4 791.7 842.6 752.4 823.2 747.5 834.0 678.4 817.3 10 10 10 10 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
MBRB3030CTL
The procedure to determine if a rectifier is appropriate, from a reverse energy standpoint, to be used in the application circuit is as follows: a. Obtain "Peak Reverse Current versus Time" curve from data book. b. Determine steady state operating voltage (OV) of circuit. c. Determine parasitic inductance (L) of circuit section of interest. d. Obtain rated breakdown voltage (BVR) of rectifier from data book. e. From the following relationships, d + L @ dt i(t) (BVR * OV) @ t I+ L V
a "designer" l versus t curve is plotted alongside the device characteristic plot. f. The point where the two curves intersect is the current level where the devices will start to fail. A peak inductor current below this intersection should be chosen for safe operating. As an example, the values were chosen as L = 200 mH, OV = 12 V and BVR = 35 V.
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MBRB3030CTL
Figure 13 illustrates the example. Note the UIS characterization curve, the parasitic inductor current curve and the safe operating region as indicated.
120 100 80 60 40 20 SAFE OPERATING AREA 0 0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 TIME (s) UIS CHARACTERIZATION CURVE Ipeak -- TIME RELATIONSHIP DUE TO CIRCUIT PARASITICS
SUMMARY
Traditionally, power rectifier users have been supplied with single-data-point reverse-energy characteristics by the supplier's device data sheet; however, as has been shown here and in previous work, the reverse withstand energy can vary significantly depending on the application. What was done in this work was to create a characterization scheme by which the designer can overlay or map their particular requirements onto the part capability and determine quite accurately if the chosen device is applicable. This characterization technique is very robust due to its statistical approach, and with proper guardbanding (6s) can be used to give worst-case device performance for the entire product line. A "typical" characteristic curve is probably the most applicable for designers allowing them to design in their own margins.
References
1. Borras, R., Aliosi, P., Shumate, D., 1993, "Avalanche Capability of Today's Power Semiconductors, "Proceedings, European Power Electronic Conference," 1993, Brighton, England 2. Pshaenich, A., 1985, "Characterizing Overvoltage Transient Suppressors," Powerconversion International, June/July
Figure 13. DUT Peak Reverse and Circuit Parasitic Inductance Current versus Time
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Rectifier Device Data
MBRB3030CTL
PACKAGE DIMENSIONS
C E B V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40
A S
-T-
SEATING PLANE
K G D H
3 PL M
J
DIM A B C D E G H J K S V
0.13 (0.005)
T
CASE 418B-02 ISSUE B
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
STYLE 2: PIN 1. 2. 3. 4.
GATE DRAIN SOURCE DRAIN
STYLE 3: PIN 1. 2. 3. 4.
ANODE CATHODE ANODE CATHODE
Rectifier Device Data
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MBRB3030CTL
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MBRB3030CTL/D Rectifier Device Data

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